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| Ordering number : ENN8102 SCH1311 P-Channel Silicon MOSFET SCH1311 Features * * * General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --30 20 --1.5 --6.0 0.8 150 --55 to +150 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-0.8A ID=--0.8A, VGS=-10V ID=--0.4A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --30 --1 10 --1.2 0.9 1.5 225 375 185 30 20 7 4 22 8 290 525 --2.6 typ max Unit V A A V S m m pF pF pF ns ns ns ns Marking : JL Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1504PE TS IM TB-00000517 No.8102-1/4 SCH1311 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--10V, VGS=-10V, ID=--1.5A VDS=--10V, VGS=-10V, ID=--1.5A VDS=--10V, VGS=-10V, ID=--1.5A IS=--1.5A, VGS=0 Ratings min typ 4.7 0.8 0.7 --0.89 --1.5 max Unit nC nC nC V Package Dimensions unit : mm 2221A Switching Time Test Circuit VIN VDD= --15V 1.6 0.05 0.2 654 0.2 0V --10V VIN ID= --0.8A RL=18.7 1.6 1.5 D 1 2 3 0.5 0.56 PW=10s D.C.1% VOUT 0.05 G 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 SCH1311 P.G 50 S 0.25 --2.0 ID -- VDS --6 --5 V V --8V V --2.0 --1.8 --1.6 ID -- VGS VDS= --10V --1.8 --1.6 Drain Current, ID -- A V --4 Drain Current, ID -- A --10 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 --0.2 --1.4 --1.2 --1.0 --0.8 --0.6 VGS= --3V 5C Ta= 7 0 --0.5 --1.0 --1.5 --2.0 --0.4 --0.2 0 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --2.5 --25 --3.0 C 25C --3.5 --4.0 Drain-to-Source Voltage, VDS -- V 800 IT02742 600 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT02743 RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 700 600 500 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 500 ID= --0.4A --0.8A 400 A, VG --0.4 I D= --4 S= V 300 0.8 I D= -200 = --10 A, V GS V 100 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT02744 Ambient Temperature, Ta -- C IT08152 No.8102-2/4 SCH1311 5 yfs -- ID VDS= --10V Forward Transfer Admittance, yfs -- S 3 --10 7 5 IF -- VSD VGS=0 Forward Drain Current, IF -- A 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 C 25 1.0 7 5 3 2 = Ta --2 C 5 C 75 0.1 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Drain Current, ID -- A 100 7 IT02746 1000 7 5 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Ta=75 C 25C --25C IT02747 VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF td(off) Switching Time, SW Time -- ns 5 3 2 3 2 Ciss 10 7 5 3 2 td(on) tf 100 7 5 3 2 tr Coss Crss 0 --5 --10 --15 --20 --25 --30 IT02749 1.0 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 Drain Current, ID -- A --10 IT02748 --10 7 5 3 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --1.5A --8 IDP= --6A <10s 10 ID= --1.5A 10 Drain Current, ID -- A m 0 s s s 1m --6 --1.0 7 5 3 2 --0.1 7 5 3 2 D C op er at 10 io n 0m s 25 a= (T --4 ) C Operation in this area is limited by RDS(on). --2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 --0.01 --0.01 2 3 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 5 7 --0.1 23 5 7--1.0 23 5 7 --10 23 5 Total Gate Charge, Qg -- nC 1.0 IT02750 Drain-to-Source Voltage, VDS -- V IT08153 PD -- Ta Allowable Power Dissipation, PD -- W 0.8 M ou nte 0.6 do na ce ram ic 0.4 bo ard (9 00 mm 2 0.2 !0 .8m m) 140 160 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C IT08147 No.8102-3/4 SCH1311 Note on usage : Since the SCH1311 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2004. Specifications and information herein are subject to change without notice. PS No.8102-4/4 |
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